| 发明名称 |
Method of treating semiconductor film and method of fabricating semiconductor device |
| 摘要 |
A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing an oxide film which is formed on the surface of the semiconductor film.
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| 申请公布号 |
US2002102820(A1) |
申请公布日期 |
2002.08.01 |
| 申请号 |
US20010976434 |
申请日期 |
2001.10.15 |
| 申请人 |
HAMADA HIROKI;HIRANO KIICHI;SASAKI AKIFUMI |
发明人 |
HAMADA HIROKI;HIRANO KIICHI;SASAKI AKIFUMI |
| 分类号 |
H01L27/146;C30B1/02;C30B33/00;H01L21/02;H01L21/20;H01L21/316;H01L21/324;H01L21/336;H01L27/10;H01L27/12;H01L29/78;H01L29/786;H01L31/04;(IPC1-7):H01L21/00;C30B1/00;H01L21/36 |
主分类号 |
H01L27/146 |
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