| 摘要 |
A method of stabilizing a fluorosilicate glass (FSG) (36, 40) used as an inter-level dielectric layer and having via or other holes (42, 44) formed therethrough for contacting an aluminium or copper metallization. The FSG layer including the hole is subjected first to a plasma of nitrogen and possibly hydrogen and then to an argon plasma. The nitrogen plasma creates a nitrogen-rich surface, which reacts with the after deposited titanium to form a thin stable TiN layer. The nitrogen plasma may be applied at relatively low power. The hydrogen plasma removes free fluorine in the FSG which can create problems with peeling. The hydrogen/nitrogen may be supplied in the form of forming gas containing less than 7 % hydrogen. The subsequent argon plasma cleans the surface, including possibly removing a nitrided aluminium surface formed by the nitrogen plasma from an aluminium metallization. The process may also be applied to a copper dual-damascene metallization. After the two plasma treatments, a liner/barrier layer, preferably of Ti/TiN for Al and Ta/TaN for Cu, is coated on the walls of the hole and over the top of the FSG layer, and a metal is deposited in the hole to fill it. |
