发明名称 |
Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films |
摘要 |
A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.
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申请公布号 |
US2002102824(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010774296 |
申请日期 |
2001.01.29 |
申请人 |
VOUTSAS APOSTOLOS;HARTZELL JOHN W.;NAKATA YUKIHIKO |
发明人 |
VOUTSAS APOSTOLOS;HARTZELL JOHN W.;NAKATA YUKIHIKO |
分类号 |
H01L21/205;C30B1/02;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):C30B1/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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地址 |
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