| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A method of patterning conductive lines (252) of a memory array integrated circuit (200) using a hard mask (244) and reactive ion etching (RIE). Using a hard mask (244) prevents oxidation of underlying conductive lines (210).
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| 申请公布号 |
WO02059976(A1) |
申请公布日期 |
2002.08.01 |
| 申请号 |
WO2002US01920 |
申请日期 |
2002.01.24 |
| 申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
NING, XIAN;NUETZEL, JOACHIM |
| 分类号 |
H01L21/033;H01L21/8246;H01L27/22;(IPC1-7):H01L27/22;H01L21/822 |
主分类号 |
H01L21/033 |
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