Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same

摘要

With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a desired height and smooth it. The method is characterized in that the single crystal silicon film is arranged opposite to silicon oxide in a furnace during the etching process.