| 摘要 |
A method for controlling multiple gate oxide growing by argon plasma doping. An argon plasma doping process is utilized to dope argon ions into the surface layer in the channel region of semiconductor substrate. A thermal oxidation step is then performed to form a gate oxide layer on the semiconductor substrate. Since argon ions doping will increase growing thickness of gate oxide, multiple thickness of gate oxide can be produced in one thermal oxidation step by doping different dosage of argon ions in each channel region. Accordingly, using of thermal oxidation step is decreased to shorten process time and therefore increases throughput.
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