发明名称 |
Semiconductor device with two types of FET's having different gate lengths and its manufacture method |
摘要 |
A gate electrode conductive film is formed on the surface of a semiconductor substrate. First and second gate mask patterns made of a first insulating material are formed on the gate electrode conductive film on first and second sections. Sidewall spacers are formed on the sidewalls of the first and second gate mask patterns, the sidewall spacer being made of a second insulating material having an etching resistance different from the first insulating material. The second section is covered with a mask pattern and the sidewall spacer on the sidewall of the first gate mask pattern is removed. The gate electrode conductive film is etched to leave first and second gate electrodes on the first and second sections.
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申请公布号 |
US2002102782(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010996758 |
申请日期 |
2001.11.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
OSHIMA TADASHI |
分类号 |
G03F7/40;H01L21/302;H01L21/3065;H01L21/8234;H01L21/8244;H01L27/088;H01L27/10;H01L27/11;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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