| 摘要 |
A thickness metrology apparatus and method for accurately determining the actual thickness of thin dielectric film on a semiconductor wafer. The wafer is subjected to a heat treatment such as baking at a heating station of the apparatus to cause desorption of organic compounds from the film. The treated wafer is transferred to a measurement stage where the thickness of the film is measured by an ellipsometer, for example. The actual thickness of the film is determined from the measured thickness and a change in the measured film thickness as a function of time for the film due to absorption of organic compounds onto the film following desorption of organic compounds therefrom.
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