发明名称 |
Process for producing a photoelectric conversion device |
摘要 |
A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.
|
申请公布号 |
US2002102764(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20020056108 |
申请日期 |
2002.01.28 |
申请人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L27/14;C30B1/02;H01L21/20;H01L31/04;H01L31/18;H01L31/20;(IPC1-7):H01L21/00;C30B1/00;H01L21/36 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|