| 摘要 |
<p>The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam (18) toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target (22). The precursor gas preferably comprises a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.</p> |
