发明名称 POWER BIPOLAR TRANSISTOR
摘要 <p>The present invention relates to semi-conductor device comprising: a substrate (2); a first semi-conducting region (4) of a first conductive type adjacent to the substrate and provided with a first contact part arranged on the side of the device situated opposite the substrate; a second semi-conducting region (14) of a second opposite conductive type the centre line of which extends in the form of a polygon, which region has a first junction to the first semi-conducting region and which is provided with a second contact part arranged on the side of the device situated opposite the substrate; a third semi-conducting region (18) of the same conductive type as the first semi-conducting region, the centre line of which extends in the form of a polygon, which region has a first junction to the second semi-conducting region and which is provided with a third contact part arranged on the side of the device situated opposite the substrate.</p>
申请公布号 WO2002059978(A1) 申请公布日期 2002.08.01
申请号 IB2001002655 申请日期 2001.12.19
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