COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF COPPER,TANTALUM AND TANTALUM NITRIDE

摘要

Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemic al formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive o r inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN i s achieved.