发明名称 Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
摘要 A shielded interconnect and a method of manufacturing a shielded interconnect implemented in a damascene back-end-of-line technology to form electromagnetically shielded interconnects. The standard metallization of the damascene technology is used as a core layer in a coaxial interconnect line. Prior to filling the via and trench openings in the damascene stack with this standard metallization, conductive and dielectric layers are formed as shield and insulator layers, respectively, of the coaxial interconnect line.
申请公布号 US2002102835(A1) 申请公布日期 2002.08.01
申请号 US20010948370 申请日期 2001.09.06
申请人 STUCCHI MICHELE;MAEX KAREN;ROEST DAVID DE 发明人 STUCCHI MICHELE;MAEX KAREN;ROEST DAVID DE
分类号 H01L21/768;H01L23/522;H01L23/528;H01L23/66;(IPC1-7):H01L21/476;H01L29/40;H01L23/52 主分类号 H01L21/768
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