| 发明名称 |
High voltage semiconductor device |
| 摘要 |
An IGBT has a punch-through structure including an n+ buffer layer. It includes a p- low concentration layer formed between the n+ buffer layer and a p+ drain layer. Owing to the low concentration layer, the drain current decreases to zero gradually, not rapidly, when the IGBT is turned off.
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| 申请公布号 |
US2002100934(A1) |
申请公布日期 |
2002.08.01 |
| 申请号 |
US20020059186 |
申请日期 |
2002.01.31 |
| 申请人 |
NAKAGAWA AKIO;MATSUDAI TOMOKO |
发明人 |
NAKAGAWA AKIO;MATSUDAI TOMOKO |
| 分类号 |
H01L29/78;H01L21/336;H01L29/08;H01L29/739;(IPC1-7):H01L31/119;H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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