Semiconductor device and its fabrication method

摘要

An interlayer dielectric film that surrounds via holes for connecting wirings of a second wiring layer and the wirings of a third wiring layer is constituted of a dielectric material having a relatively smaller Young's modulus compared with the Young's modulus of a dielectric material constituting a dielectric film that surrounds wiring grooves in dual damascene wirings, which can improve the heat resistance and electromigration resistance of the dual damascene wirings.