发明名称 INTEGRATED CIRCUITS PROTECTED AGAINST REVERSE ENGINEERING AND METHOD FOR FABRICATING THE SAME USING ETCHED PASSIVATION OPENINGS IN PASSIVATION LAYER
摘要 <p>Semiconducting devices, including integrated circuits, are protected from reverse engineering by passivation openings made in a passivation layer. When a reverse engineeretches away the passivation layer and typically the first metal layer, underlying metallayers and/or other elements of the device are destroyed making the reverse engineeringall the more difficult. A method for fabricating such devices is also disclosed.</p>
申请公布号 WO2002059964(A2) 申请公布日期 2002.08.01
申请号 US2002002261 申请日期 2002.01.24
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