| 摘要 |
PURPOSE: A bonding pad structure is provided to increase a step coverage of the bonding pad without additional processes by respectively forming an insulating layer on a first metal pad and a P-poly pattern. CONSTITUTION: A bonding pad structure comprises a semiconductor substrate(100), a first interlayer dielectric(102) formed on the semiconductor substrate(100), a P-poly pattern(104) formed on a pad formation region on the first interlayer dielectric(102), a second interlayer dielectric(106) formed on the P-poly pattern(104) and the first interlayer dielectric(102), a first metal pad(108) having a smaller size than the P-poly pattern(104) formed on the second interlayer dielectric(106), a third interlayer dielectric(110) formed on the first metal pad(108) and the second interlayer dielectric(106), a second metal pad(112) formed on the resultant structure so as to be directly connected to the first metal pad(108) and the P-poly pattern(104) through via holes and a protection layer(114) for exposing a defined region of the second metal pad(112). |
