发明名称 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding
摘要 A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
申请公布号 US2002100794(A1) 申请公布日期 2002.08.01
申请号 US20020099283 申请日期 2002.03.15
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 HO KWOK KEUNG PAUL;CHOOI SIMON;XU YI;ALIYU YAKUB;ZHOU MEI SHENG;SUDIJONO JOHN LEONARD;GUPTA SUBHASH;ROY SUDIPTO RANENDRA
分类号 B23K20/00;H01L23/485;(IPC1-7):B23K31/02 主分类号 B23K20/00
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