| 摘要 |
A method for manufacturing a semiconductor device with a shallow channel on a silicon-on-insulator substrate is disclosed. The method uses a dielectric layer as a mask, an oxygen implantation and a heating process to form a silicon dioxide layer within a silicon-on-insulator substrate before forming a gate electrode on the silicon-on-insulator substrate. That is, the junction depth of the channel is reduced. First of all, a silicon-on-insulator substrate having a silicon layer and an insulating layer is provided, wherein the silicon layer is separated by the insulating layer. Secondly, a first dielectric layer is deposited on the silicon layer. Thirdly, a gate region pattern is transferred into the first dielectric layer to form a trench and expose the silicon layer. Then, oxygen molecules are implanted into the silicon layer, and the silicon-on-insulator substrate is heated to form a silicon dioxide layer therein. Next, a second dielectric layer is deposited and the trench is filled with the same. Then, two spacers are formed in the trench by anisotropically etching the second dielectric layer. Furthermore, a gate electrode is formed by filling the trench with a conductive layer. Moreover, the first dielectric layer is removed. Finally, source and drain regions are formed in the silicon layer.
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