发明名称 |
Method for producing dual damascene interconnections and structure produced thereby |
摘要 |
A method (and structure) of forming an interconnect on a semiconductor substrate, includes forming a relatively narrow first structure in a dielectric formed on a semiconductor substrate, forming a relatively wider second structure in the dielectric formed on the semiconductor substrate, forming a liner in the first and second structures such that the first structure is substantially filled and the second structure is substantially unfilled, and forming a metallization over the liner to completely fill the second structure.
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申请公布号 |
US2002100983(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010772920 |
申请日期 |
2001.01.31 |
申请人 |
CLEVENGER LAWRENCE A.;NESBIT LARRY A. |
发明人 |
CLEVENGER LAWRENCE A.;NESBIT LARRY A. |
分类号 |
H01L23/522;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L23/48;H01L21/44;H01L21/476 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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