发明名称 PLASMA GENERATION APPARATUS AND METHOD
摘要 An apparatus and process for processing a substrate using components and particles formed in a remote plasma generation section of a processing chamber. The processing chamber includes a processing section and a plasma generation section. A plasma field is generated in the plasma generation section, such that the plasma field is generated remotely from the processing section. Components and particles from the plasma field can diffuse and/or drift from the plasma generation section through a passageway to the processing section. The processing chamber may include a plurality of plasma generation sections for generating additional plasma fields. In each instance, the additional plasma fields are generated remotely from the processing section.
申请公布号 WO02059934(A2) 申请公布日期 2002.08.01
申请号 WO2002US01605 申请日期 2002.01.17
申请人 WAFERMASTERS, INCORPORATED 发明人 YOO, WOO, SIK
分类号 H05H1/24;H01J37/32;H01L21/3065;H01L21/31;H05H1/46 主分类号 H05H1/24
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