发明名称 |
MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications |
摘要 |
TBHy is demonstrated as an efficient and a less carbon-containing N precursor for the growth of high-quality InGaAsN by MOCVD at lower growth temperatures. The photovoltaic characteristics of 1.20 eV InGaAsN solar cells, such as open-circuit voltage, short-circuit current, fill factor and efficiency are improved significantly by using TBHy compared to using DMHy. This demonstration can also be applied to other InGaAsN-based optoelectronic and electronic devices. Therefore, this invention is extremely important to expedite the demonstration of next-generation prototype products such as 1.3 mum-InGaAsN-epitaxial VCSELs for high-speed optical communications, low-power Npn InGaP/InGaAsN/GaAs HBTs and InGaP/AlGaAs/InGaAsN HEMTs for wireless applications, and high-efficiency multiple-junction InGaP/GaAs/InGaAsN/Ge solar cells for space power systems.
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申请公布号 |
US2002102847(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010956540 |
申请日期 |
2001.09.17 |
申请人 |
SHARPS PAUL R.;HOU HONG QI;LI NEIN-YI;KANJOLIA RAVI |
发明人 |
SHARPS PAUL R.;HOU HONG QI;LI NEIN-YI;KANJOLIA RAVI |
分类号 |
C23C16/30;C30B25/02;H01L21/205;H01L31/078;H01L31/18;(IPC1-7):H01L21/20;H01L21/36;H01L21/44 |
主分类号 |
C23C16/30 |
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