| 摘要 |
An emission structure includes a resistor with at least one emitter tip thereover and at least one substantially vertically oriented conductive element positioned adjacent the resistor. The conductive element may contact the resistor. A method for fabricating the emission structure includes forming at least one conductive line, depositing at least one layer of semiconductive or conductive material over and laterally adjacent the at least one conductive line, and forming a hard mask in recessed areas of the surface of the uppermost material layer. The underlying material layer or layers are patterned through the hard mask, exposing substantially longitudinal center portions of the conductive lines. The remaining semiconductive or conductive material is patterned to form the emitter tip and resistor. At least the substantially central longitudinal portion of the conductive trace is removed to form the conductive element.
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