发明名称 |
Composite gate dielectric layer |
摘要 |
A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOX<=2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.
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申请公布号 |
US2002102797(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010773442 |
申请日期 |
2001.02.01 |
申请人 |
MULLER DAVID A.;TIMP GREGORY L.;WILK GLEN DAVID |
发明人 |
MULLER DAVID A.;TIMP GREGORY L.;WILK GLEN DAVID |
分类号 |
H01L29/78;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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