| 发明名称 |
Insitu radiation protection of integrated circuits |
| 摘要 |
A microchip having a passivation layer on an electrically active surface; a multitude of electrically conducting protuberances for electrically coupling the active surface to a substrate; a layer on the passivation layer for protecting against electromagnetic radiation; and a layer on an electrically inactive surface of the microchip for protecting against electromagnetic radiation.
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| 申请公布号 |
US2002100985(A1) |
申请公布日期 |
2002.08.01 |
| 申请号 |
US20010772599 |
申请日期 |
2001.01.30 |
| 申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC |
发明人 |
SHAH TUSHAR T.;STURCKEN KEITH K.;WRIGHT STEVEN |
| 分类号 |
H01L23/29;H01L23/31;H01L23/552;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/29 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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