发明名称 Electron exposure apparatus
摘要 To provide an electron exposure apparatus capable of providing high resolution and performing electron exposure at high speed, integrated tips are used, only the tips provided at ends control distances between the tips and the surface of a wafer and the tips used for electron exposure follow the wafer according to deformations of cantilevers, which occur due to the Coulomb force resultant from a voltage applied to each tip.
申请公布号 US2002101573(A1) 申请公布日期 2002.08.01
申请号 US20020050814 申请日期 2002.01.18
申请人 HITACHI, LTD. 发明人 ISHIBASHI MASAYOSHI;HEIKE SEIJI;HASHIZUME TOMIHIRO;WADA YASUO;KAJIYAMA HIROSHI
分类号 G01Q30/06;G01Q80/00;G11B9/00;H02N1/00;(IPC1-7):G03B27/72 主分类号 G01Q30/06
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