发明名称 |
Versatile atomic layer deposition apparatus |
摘要 |
An improved ALD apparatus is disclosed as having multiple deposition regions in which individual monolayer species are deposited on a substrate under different processing conditions in each region. Each deposition region is chemically separated from an adjacent deposition region. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent deposition regions. According to the number of deposition regions provided, a multitude of substrates could be simultaneously processed and run through the cycle of deposition regions until a desired thickness of deposited solid film is obtained.
|
申请公布号 |
US2002100418(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20020093394 |
申请日期 |
2002.03.11 |
申请人 |
SANDHU GURTEJ;DERDERIAN GARO J. |
发明人 |
SANDHU GURTEJ;DERDERIAN GARO J. |
分类号 |
C23C16/44;C23C16/455;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|