发明名称 Versatile atomic layer deposition apparatus
摘要 An improved ALD apparatus is disclosed as having multiple deposition regions in which individual monolayer species are deposited on a substrate under different processing conditions in each region. Each deposition region is chemically separated from an adjacent deposition region. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent deposition regions. According to the number of deposition regions provided, a multitude of substrates could be simultaneously processed and run through the cycle of deposition regions until a desired thickness of deposited solid film is obtained.
申请公布号 US2002100418(A1) 申请公布日期 2002.08.01
申请号 US20020093394 申请日期 2002.03.11
申请人 SANDHU GURTEJ;DERDERIAN GARO J. 发明人 SANDHU GURTEJ;DERDERIAN GARO J.
分类号 C23C16/44;C23C16/455;(IPC1-7):C23C16/00 主分类号 C23C16/44
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