| 摘要 |
An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure.
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