发明名称 |
Offset-gate-type semiconductor device |
摘要 |
A semiconductor device includes a first semiconductor region having a first conductivity type, a second semiconductor region formed on the first semiconductor region and having the first conductivity type, a third semiconductor region formed in a surface of the second semiconductor region and having a second conductivity type, a fourth semiconductor region formed in the surface of the second semiconductor region and having the second conductivity type, and a gate structure formed on the second and fourth semiconductor region. The semiconductor device further includes a conductive member arranged in the trench extending from a surface of the fourth semiconductor region to the first semiconductor region, the trench having one sidewall surface flush with a sidewall surface of the gate structure.
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申请公布号 |
US2002100951(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010013874 |
申请日期 |
2001.12.13 |
申请人 |
YASUHARA NORIO;ONO SYOTARO;NAKAMURA KAZUTOSHI;KAWAGUCHI YUSUKE;HODAMA SHINICHI;NAKAGAWA AKIO |
发明人 |
YASUHARA NORIO;ONO SYOTARO;NAKAMURA KAZUTOSHI;KAWAGUCHI YUSUKE;HODAMA SHINICHI;NAKAGAWA AKIO |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/10;H01L29/40;H01L29/417;H01L29/45;H01L29/78;(IPC1-7):H01L23/58;H01L29/76;H01L31/062 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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