| 摘要 |
<p>A ferroelectric nonvolatile semi-conductor memory comprising a memory unit comprising a bit line, a transistor for selection, a sub-memory unit comprising M memory cells, M plate lines, and a sense amplifier connected to the bit line. Each memory cell comprises a first electrode, a ferroelectric layer, and a second electrode. The first electrode of the memory cell constituting the sub-memory unit is common in the sub-memory unit. The common first electrode is connected to the bit line via the transistor for selection, and the second electrode is connected to the plate line. In a method for driving the ferroelectric nonvolatile semi-conductor memory, data stored in the memory cell at an externally designated address is read, latched to the sense amplifier, and the data latched to the sense amplifier is output.</p> |
