| 摘要 |
PURPOSE: A novel lithographic photoresist composition containing a fluorinated vinyl polymer so as to address needs in the art is provided, and a composition is provided in which the fluorinated vinylic polymer is substantially transparent to deep ultraviolet radiation, i.e., radiation having a wavelength less than 250 nm. CONSTITUTION: The lithographic photoresist composition comprises (a) a fluorinated vinylic polymer having a pendant group that is a carboxylic acid, a nitrile, an amide, or an acid-cleavable functionality; and (b) a radiation-sensitive acid generator. The lithographic photoresist composition comprises (a) a fluorinated vinylic polymer comprised of monomeric units having the structure of the following formula 1, wherein R1 is fluoro, methyl or trifluoromethyl, and R2 is selected from the group consisting of the following formulae 2 to 7, wherein R3 is hydrogen, lower alkyl or fluorinated lower alkyl, or is selected so as to render R2 acid-cleavable, R4 and R5 are lower alkyl or are linked to form a five or six membered heterocyclic ring that may or may not contain an additional heteroatom, R6 and R7 are lower alkyl or are linked to form a five or six membered heterocyclic ring that may or may not contain an additional heteroatom and/or a carbonyl moiety, m is an integer of 1 to 3 inclusive, n is zero or 1, and L is a linking group.
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