| 摘要 |
PROBLEM TO BE SOLVED: To deposite a multilayer film suffering no impurity contamination. SOLUTION: Targets 22a to 22d are disposed in a 90 deg. pitch at equidistant positions from the axial center of a shutter rotating mechanism 20, a substrate 34 is disposed oppositely to a shutter rotating mechanism 20 and held with a substrate holder 32, and targets 22a to 22d are sequentially irradiated with ion beams 26a to 26d from respective ion sources 12a to 12d to emit sputtered particles 40a to 40d. When performing pre-sputtering of the target 22a selected as a material for film deposition, a shutter 38 is disposed in the region which connects the target 22a and substrate 34, and the pre-sputtering of the target 22a is performed in this state. After completion of the pre-sputtering, sputtering of target 22a is performed while the shutter 38 is rotated to the target 22b side where subsequent pre-sputtering is to be performed. A multilayer film is deposited on the substrate 34 by repeating this processing.
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