发明名称 Cr ALLOY TARGET MATERIAL, PRODUCTION METHOD THEREFOR AND FILM COATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a Cr alloy target material which exhibits little local melting, stable discharge characteristics and a prolonged life, and to provide a production method therefor and a film coating method by the utilization of these techniques. SOLUTION: A Cr alloy target material is presented where, by area, a <=5% pure Si phase and a <=40% intermetallic compound phase formed of target material constituting elements are present in the target material structure. As a concrete example, a <=5% pure Si phase, a <=40% intermetallic compound phase formed of target material constituting elements, and the balance consisting substantially of a solid solution phase formed of target material constituting elements are present. Preferably, the material has a composition containing, by atom, 1 to 40% Si and the balance substantially Cr. The addition of 1 to 7% B is also effective. The target material is preferable for arc ion plating, and is used, e.g. for surface coating of sliding parts, cutting tools and dies.
申请公布号 JP2002212707(A) 申请公布日期 2002.07.31
申请号 JP20010346804 申请日期 2001.11.13
申请人 HITACHI METALS LTD 发明人 INOUE KENICHI
分类号 B23B27/14;B21D37/20;B22F3/02;B22F3/14;B22F3/15;C22C27/06;C23C14/24;C23C14/34;(IPC1-7):C23C14/24 主分类号 B23B27/14
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