Method for separating devices on a common substrate, in particular electronic device elements

摘要

The process separates elements (2) from a semiconductor wafer (1) on which they are spaced apart by separation regions (3). The underside of the wafer carries a retarding layer (4) of e.g. a silicon compound having a lower plasma etch rate, with gaps (5) under the separation regions. The desired final thickness of the separated elements is determined by the thickness of the retarding layer and the ratio of the etch rates. This gives rise at the etching stage to a deep groove in the underside where the wafer is easily broken into pieces corresponding to the separate elements.