Process for artificial optical anisotropy creation in optical isotropic semicondustors

摘要

he invention refers to the technology of semiconducting materials and structures and may be used for manufacture of non-linear optical elements. The invention consists in the manufacture on base of semiconductors with cubic lattice of non-linear optical elements with built-in artificial optical anisotropy.The optical isotropic semiconductor crystal is subjected to high-energy ion implantation at an angle, providing for the fulfillment of the phase synchronism conditions with the subsequent electrochemical pickling of the implanted region.Claims: 1Fig.: 4