| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in which thin films can be deposited using cathode arc discharge. SOLUTION: When irradiating a substrate 41 with a plasma beam PB generated from a target by cathode arc discharge to deposit a thin film, the normal to the substrate surface is tilted by an angleαrelatively to the beam direction of the plasma beam PB. Consequently, migration at the time of film deposition is promoted, and a film having small internal stress is formed. Moreover, the film uniformity can be improved by rotating the substrate 41 in its plane.
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