| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method most adequate for a system capable of depositing silicon oxidized films, or the like, by using a gaseous material, such as silane by plasma enhanced CVD on a large-area substrate. SOLUTION: While a conductive partition plate is kept at a grounding potential or while the conductive partition plate is heated under the grounding potential thereof, cleaning gas is introduced into a plasma forming space and high-frequency electric power is impressed to high-frequency electrodes arranged therein to form active species and to clean the inside of the plasma forming space. The formed active species are introduced through the plural through-holes of the conductive partition plate into a deposition treatment space and the deposition treatment space is also cleaned by the active species inputted into the deposition treatment chamber.
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