摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for producing a CMP abrasive capable of reducing contamination by impurities at the step for producing a slurry of cerium oxide, capable of highly flattening a surface, and capable of allowing the surface to be ground, such as an insulating film of silicon oxide to be polished without defects at a high speed. SOLUTION: This method for producing the CMP abrasive is characterized in that the average particle diameter of the cerium oxide particles is regulated so as to be 0.15-1μm by adding the cerium oxide particles to a solvent containing a dispersant and water, and colliding the cerium oxide to each other under a pressure of >=90 MPa to pulverize the cerium oxide particles.</p> |