发明名称 CMP ABRASIVE AND METHOD FOR PRODUCING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for producing a CMP abrasive capable of reducing contamination by impurities at the step for producing a slurry of cerium oxide, capable of highly flattening a surface, and capable of allowing the surface to be ground, such as an insulating film of silicon oxide to be polished without defects at a high speed. SOLUTION: This method for producing the CMP abrasive is characterized in that the average particle diameter of the cerium oxide particles is regulated so as to be 0.15-1μm by adding the cerium oxide particles to a solvent containing a dispersant and water, and colliding the cerium oxide to each other under a pressure of >=90 MPa to pulverize the cerium oxide particles.</p>
申请公布号 JP2002212545(A) 申请公布日期 2002.07.31
申请号 JP20010009067 申请日期 2001.01.17
申请人 HITACHI CHEM CO LTD 发明人 YAMAMOTO YASUHIRO;YAMADA TAKAO;SAKURAI TADASHI;SUGIMOTO ATSUSHI;SUZUKI HIROYUKI;KITAMURA TAKEETSU;ASHIZAWA TORANOSUKE
分类号 B24B57/02;B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 主分类号 B24B57/02
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