| 摘要 |
<p>A sapphire base substrate is patterned to form recessed portions. Then, a semiconductor layer of gallium nitride is grown to fill said recessed portions on the base substrate and make the upper surface even. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the patterned region of the base substrate to separate the semiconductor layer from the base substrate. As a result, a nitride semiconductor substrate is produced from the semiconductor layer.</p> |
