Process and apparatus for the production of films of oxide type single crystal

摘要

A film of an oxide type single crystal, such as lithium niobate, on a substrate of such an oxide type single crystal is epitaxially grown on the substrate by contacting the substrate with a melt in an overcooled state. To improve productivity and reduce cracking of the substrate while increasing crystallinity of the film, the substrate of the oxide type single crystal is contacted with the melt (12) held in a first furnace (21), and the substrate of the oxide type single crystal is held inside a second furnace (24) separated from said first furnace before or after contact with the melt. The temperature of the substrate is adjusted by the substrate in the second furnace. $$