| 摘要 |
PURPOSE: To provide a semiconductor device having such a structure as a short circuit does not take place between plug wirings even a void is generated in an insulation layer at the gap between wiring layers, and its fabricating method. CONSTITUTION: The method for fabricating a semiconductor device comprises a step for forming transfer gates 3 and 34 closely each other on a semiconductor substrate 1 through a gap 10, a step for filling the gap to cover a wiring layer, a step for opening a contact hole 11 in an insulation layer 8 at the gap part, a step for forming a short circuit preventive insulation film 5 in the contact hole, an etch back step for removing the short circuit preventive insulation film 5 at least on the bottom part of the gap to expose the semiconductor substrate 1, and a step for forming a plug wiring 12.
|
