| 摘要 |
<p>PURPOSE:To enhance the low afterimage property by a method wherein a charge implantation preventive layer is formed of a P type or N type amorphous semiconductor layer in contact with an I layer as well as a semiconductor layer containing P type or N type fine crystal. CONSTITUTION:Cr is deposited on a glass substrate 11 by sputtering and then etched away in specific shape to form a lower electrode 12 comprising a photodiode. Next, the substrate 11 is heated at specific temperature using a capacity coupled type CVD device and then specific amount of SiH4, PH3, and H2 are led-in to be discharged meeting the specific requirements so as to deposit an N type amorphous silicon layer 13 250Angstrom thick containing fine crystal. Successively, the substrate 11 is heated again at specific temperature using the same capacity coupled type CVD device and then specific amount of SiH4, PH3 and H2 are led-in again to be discharged meeting the specific requirements so as to deposit another N type amorphous silicon layer 14 100Angstrom thick for the completion of an N type charge preventive layer. Likewise, a P type amorphous semiconductor layer 17 containing the fine crystal 250Angstrom thick is deposited to complete a P type charge preventive layer.</p> |
