| 摘要 |
<p>PURPOSE:To provide a thin film type integrated circuit semiconductor device having a structure in which both side surface wirings and both side surface processing can be performed. CONSTITUTION:A semiconductor device has a thin film laminated layer 1 formed integrally with transistor elements, and a support layer 2 for supporting the layer 1. The layer 1 has a surface insulating film 3 formed of a multilayer film and having a flat surface to be formed with an electrode, a single crystalline semiconductor thin film 4 disposed at a lower side of the film 3 and formed with a channel forming region 5 of a transistor element, an intermediate electrode film disposed at a lower side of the film 4 and for constituting a gate electrode 9 of the element, and a rear surface layer film 10 disposed at a lower side of the intermediate film. The layer 2 is adhesively surface-secured to the film 10. Wirings of the element formed integrally are provided on the rear surface side, and additional electrodes can be processed on the front surface side.</p> |
