| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for tungsten chemical vapor deposition onto a semiconductor substrate. SOLUTION: This method includes arranging the semiconductor substrate in a deposition chamber (2), heating the substrate (1) and bringing the substrate (1) into contact with a gaseous mixture containing tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas flowing in the deposition chamber (2) to deposit the tungsten on the substrate (1). The gaseous mixture contains silane (SiH4) having a flow rate at which a flow rate ratio WF6/SiH4 attains 2.5 to 6 and the flow rate of WF6 is 30 to 60 standard cubic centimeter. On the other hand, the pressure in the deposition chamber is maintained at 0.13 to 5.33 kilopascal (1 to 40 Torr).
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