| 摘要 |
PROBLEM TO BE SOLVED: To control film deposition conditions so as to stably maintain plasma discharge when a film is formed by ion plating. SOLUTION: A method for depositing a film on a substrate arranged in a vacuum chamber by ion plating includes a main process II for supplying a first high-frequency electric power P1 under a first gas pressure G1 so as to deposit the film and a preliminary process I for supplying a prescribed high- frequency electric power under a prescribed gas pressure so as to generate plasma discharge before conducting the main process II. In the preliminary process I, the gas pressure is made higher than the first gas pressure G1 and the high-frequency electric power is made higher than the first high-frequency electric power P1 at the time of starting the process. Thereafter, the gas pressure is reduced to the first gas pressure G1 and the high-frequency electric power is adjusted to be equal to the first high-frequency electric power P1 by the time when the main process II is started. |
