| 摘要 |
<p>A high breakdown voltage semiconductor device includes an active area (D1) and a surrounding region (D2). In the active area, a second semiconductor layer (2) of a second conductivity type is formed in a first semiconductor layer (1) of a first conductivity type. A third semiconductor layer (3) of the first conductivity type is formed in the second semiconductor layer. A gate electrode (6) faces through a gate insulating film the second semiconductor layer. A first main electrode (9) is connected to the second and third semiconductor layers. A ring layer (11) of the second conductivity type surrounds the active area at a position in the surrounding region. A first low-resistivity layer (13) is formed in the ring layer and has a resistivity lower than that of the ring layer. The first low-resistivity layer is connected to the first main electrode. <IMAGE></p> |
