METHOD FOR TREATING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To control etching acceleration action when chemical liquid wherein ions for accelerating etching action are mixed in solution is used for elimination of a resist alteration layer. CONSTITUTION: Treatment chemical liquid containing ions for accelerating etching action in a state to restrain the dissociation is dripped on the surface of a substrate. After that, rotation of the substrate is controlled so as to adjust the amount of chemical liquid left on the substrate surface. As a result, the amount of ion dissociation is controlled in the case of water cleaning, and the etching acceleration action is adjusted.