发明名称 |
Buried metal dual damascene plate capacitor |
摘要 |
A metal capacitor formed as part of metal dual damascene process in the BEOL, of a wafer. A lower plate (27) of the capacitor is sandwiched between an insulating layer (25) and a dielectric layer (29). The insulating layer on an opposite side abuts a layer of metalization (23, 24) and the dielectric layer separates the lower plate of the capacitor from an upper plate (59) of the capacitor. A portion (27A) of the lower plate projects into a via (37) adjacent to it that is filled with copper (63). The via projects up to a common surface with the upper plate but is electrically isolated form the upper plate. The via also extends down to the layer of metalization.
|
申请公布号 |
US6426249(B1) |
申请公布日期 |
2002.07.30 |
申请号 |
US20000526354 |
申请日期 |
2000.03.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GEFFKEN ROBERT M.;STAMPER ANTHONY K. |
分类号 |
H01L21/3205;H01L21/02;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|