| 摘要 |
A read-out circuit capable of achieving an improvement in the reliability of a reference potential generating cell by utilizing a 1T-1C (one transistor-one ferroelectric capacitor) type FRAM which enables a reduction in area to constitute the reference potential generating cell is provided. A read-out circuit that amplifies a binary signal through a sense amplifier and reads out the amplified signal as a bit line potential is provided with a 0-level setting circuit that resets the lower potential signal in the binary signal to 0 V at a stage preceding the sense amplifier. By adopting this structure, a constant potential can be used as a reference potential, to achieve stable operation. In addition since a constant potential can be used as the reference potential, the degree of change occurring over time can be reduced. Furthermore, since the capacity of the reference potential line does not require a particularly large capacity, the power consumption during a read-out operation can be reduced.
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