| 发明名称 |
Diode-assisted gate turn-off thyristor |
| 摘要 |
A gate-controlled switch includes a gate turn-off thyristor in series with a diode. By using the diode in series with the GTO, the switch significantly increases the turn-off voltage that can be used for the current commutation. The unity turn-off gain and the snubberless turn-off capability are demonstrated.
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| 申请公布号 |
US6426666(B1) |
申请公布日期 |
2002.07.30 |
| 申请号 |
US20000708505 |
申请日期 |
2000.11.09 |
| 申请人 |
VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. |
发明人 |
LI YUXIN;HUANG ALEX Q.;MOTTO KEVIN |
| 分类号 |
H03K17/04;H03K17/732;(IPC1-7):H03K17/72 |
主分类号 |
H03K17/04 |
| 代理机构 |
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